부산대학교 도서관

A systematic study of avalanche multiplication behavior in InP has been performed on a series of diodes with avalanche region widths $w$ ranging from 2.50 to 0.08 $\mu\hbox{m}$. The local model for impact ionization is found to increasingly overestimate the multiplication at low electric fields as $w$ decreases due to the presence of dead space. The suppression of the multiplication can be modeled accurately by applying a simple correction for the injected carrier dead space to the local model, which enables the multiplication to be accurately predicted over a wide range of avalanche region widths.