부산대학교 도서관

A 64-Mb CMOS dynamic RAM (DRAM) measuring 176.4 mm/sup 2/ has been fabricated using a 0.4- mu m N-substrate triple-well CMOS, double-poly, double-polycide, double-metal process technology. The asymmetrical stacked-trench capacitor (AST) cells, 0.9 mu m*1.7 mu m each, are laid out in a PMOS centered interdigitated twisted bit-line (PCITBL) scheme that achieves both low noise and high packing density. Three circuit techniques were developed to meet high-speed requirements. Using the preboosted word-line drive-line technique, a bypassed sense-amplifier drive-line scheme, and a quasi-static data transfer technique, a typical RAS access time of 33 ns and a typical column address access time of 15 ns have been achieved.ETX