학술논문

Bitline/plateline reference-level-precharge scheme for high-density chainFeRAM
Document Type
Conference
Source
2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) VLSI circuits VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on. :169-170 2003
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Capacitors
Ferroelectric materials
Random access memory
Parasitic capacitance
Voltage
Power dissipation
Ferroelectric films
Nonvolatile memory
Variable structure systems
Polarization
Language
Abstract
This paper proposes the new bitline/plateline operation scheme for 32 Mb chainFeRAM, which overcomes these two problems and also overcomes the problem of large array current due to the grounded bitline precharge scheme used for FeRAM.