학술논문
Spin-Orbit-Torque Material Exploration for Maximum Array-Level Read/Write Performance
Document Type
Conference
Author
Source
2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :13.6.1-13.6.4 Dec, 2020
Subject
Language
ISSN
2156-017X
Abstract
A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.