학술논문
Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process
Document Type
Conference
Author
Source
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522) Asia-Pacific microwave conference Microwave Conference, 2000 Asia-Pacific. :757-762 2000
Subject
Language
Abstract
The incorporation of low concentrations of carbon (