학술논문
High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide
Document Type
Conference
Author
Source
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :653-656 2000
Subject
Language
Abstract
We show that crystalline praseodymium oxide films of the Pr/sub 2/O/sub 3/-type grown on Si(100) have outstanding dielectric properties, displaying a dielectric constant of 31 independent of substrate doping, ultra-low leakage current density of 5/spl times/10/sup -9/ A/cm/sup 2/ at V/sub g/=/spl plusmn/1.0 V @ EOT=14 /spl Aring/, good reliability, and reversible electrical breakdown. Thin Pr/sub 2/O/sub 3/ layers survive anneals of up to 1000/spl deg/C for 15 seconds with no degradation in electrical properties.