학술논문
Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules
Document Type
Conference
Author
Source
Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327) Custom integrated circuits Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999. :351-358 1999
Subject
Language
Abstract
Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 /spl mu/m SiGe HBT technology with f/sub t//f/sub max/ of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with f/sub t//f/sub max/ of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.