학술논문
Analysis of dual-V/sub T/ SRAM cells with full-swing single-ended bit line sensing for on-chip cache
Document Type
Periodical
Author
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 10(2):91-95 Apr, 2002
Subject
Language
ISSN
1063-8210
1557-9999
1557-9999
Abstract
This paper compares different high-V/sub T/ and dual-V/sub T/ design choices for a large on-chip cache with single-ended sensing in a 0.13 /spl mu/m technology generation. The analysis shows that the best design is the one using a dual-V/sub T/ cell, with minimum channel length pass transistors, and low-V/sub T/ peripheral circuits. This dual-V/sub T/ circuit provides 20% performance gain with only 1.3/spl times/ larger active leakage power, and 2.4% larger cell area compared to the best design using high-V/sub T/ cells with nonminimum channel length pass transistors.