학술논문
Investigation on dual gate oxide charging damage in 0.13/spl mu/m copper damascene technology
Document Type
Conference
Source
7th International Symposium on Plasma- and Process-Induced Damage Plasma- and process-induced damage Plasma- and Process-Induced Damage, 2002 7th International Symposium on. :14-17 2002
Subject
Language
Abstract
The plasma charging damage in 0.13 /spl mu/m dual gate oxide Cu-damascene process is studied here. It was found in our experiments that the leaky feature of 20/spl Aring/ (EOT) gate oxide makes thin gate oxide only susceptible to charging damage from high density plasma inter-layer dielectric (HDP ILD) deposition. However, application of PETEOS IMD deposition leads to obvious charging damage to the thick gate oxide.