부산대학교 도서관

We investigate the application of polar topological states in the trilayer heterostructure of SrTiO 3 (STO)-PbTiO 3 (PTO)-SrTiO 3 (STO). We develop the 3-dimensional phase-field based quantum transport simulation tool to explore and assess the application of the polar topological states on the thin film capacitor and ferroelectric field effect transistor (FEFET). Using the in-house tool, we show that (i) the Neel-type topological states can be created in nanoscale capacitor and manipulated using an electrical step pulse, (ii) the topological number varies linearly with the induced charge density, and (iii) the pulse width variations can be utilized to control the topological number and enable the functionality of the potentiation and depression. We also show that the polar topological state locally deforms the electric and elastic field distribution on the channel region, which can affect the transport property. This work presents the simulation framework and the guidelines for the device utilizing the polar topological states.