학술논문

Temperature dependence of terahertz radiation detection by field effect transistors
Document Type
Conference
Source
2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on. :1-2 Sep, 2012
Subject
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Temperature
Temperature dependence
Temperature measurement
FETs
Plasma temperature
Logic gates
Language
ISSN
2162-2027
2162-2035
Abstract
We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.