학술논문
SOI active pixel detectors of ionizing radiation-technology and design development
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 51(3):1025-1028 Jun, 2004
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
This paper concerns the development of a novel monolithic active pixel radiation sensor based on SOI technology. In this device, the sensitive volume corresponds to a high resistivity SOI "handle" wafer and the front-end CMOS electronics is integrated in the SOI device layer. Pixel test matrices have been manufactured and are under extensive characterization. The conceptual design, together with architecture and technology issues is addressed; the latest experimental results are reported.