학술논문
Predictive modeling of pattern-dependent etch effects in large-area fully-integrated 3D virtual fabrication
Document Type
Conference
Author
Source
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on. :209-212 Sep, 2014
Subject
Language
ISSN
1946-1569
1946-1577
1946-1577
Abstract
We present a predictive modeling approach for pattern-dependent etch processes implemented in a 3D virtual fabrication software platform. This technique combines long-range effects using design data and short-range effects using predictive 3D models of the design-technology interaction. For the first time, this type of pattern-dependent predictive capability is integrated into a full 3D virtual fabrication environment to enable fast accurate structural modeling of complex advanced technologies such as FinFETs, 3D memory and BEOL interconnect.