학술논문
Integration and performances of an alternative approach using copper silicide as a self-aligned barrier for 45 nm technology node Cu interconnects
Document Type
Conference
Author
Source
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Interconnect technology Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International. :15-17 2004
Subject
Language
Abstract
Simulated signal propagation performances including crosstalk and delay time were investigated for self-aligned barriers on copper, highlighting the benefits of introducing these barriers for the 65 and 45 nm technology nodes. As an alternative to electrolessly deposited alloys, a self-aligned barrier technique based on controlled Si enrichment of Cu and named CuSiN was introduced. Promising performances in terms of copper barrier efficiency, interconnect compatibility, integration (line and via resistances, leakage currents, coupling capacitances), and reliability were shown.