학술논문

Design and analysis of an ultra-high efficiency phase shifted full bridge GaN converter
Document Type
Conference
Source
2015 IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE. :2011-2016 Mar, 2015
Subject
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Signal Processing and Analysis
Gallium nitride
Inductors
Zero voltage switching
Field effect transistors
Magnetic switching
Inductance
dc-dc converter
high efficiency
magnetics
wide band gap devices
phase shifted converter
zero voltage switching
Language
ISSN
1048-2334
Abstract
The paper presents the design and development of an ultra-high efficiency phase shifted full bridge isolated dc-dc converter using Gallium Nitride (GaN) devices. Synchronous rectification along with high efficiency magnetics and use of GaN devices contribute to the improvement in efficiency. In this paper, zero voltage switching is achieved by increasing the magnetizing current in the transformer and hence reduces the switching loss in the converter. The design and development of a 1 kW, 130V to 52V isolated dc-dc phase shifted GaN converter with a switching frequency of 50 kHz is presented in this paper. Furthermore, the design and analysis of high efficiency magnetics are discussed along with the experimental verification of the results. The maximum efficiency of the converter is measured to 98.8% at 80% of full load.