부산대학교 도서관

In this work, a high performance GaN-on-Si quasi vertical PiN diode was demonstrated by the combination of a beveled sidewall and self-aligned fluorine plasma treatment. The didoes achieved a remarkable breakdown voltage ( $\text{V}_{\text {BR}}{)}$ of 930 V and an ultra-low reverse leakage current. Meanwhile the didoes showed a low specific on-resistance ( $\text{R}_{ \mathrm{\scriptscriptstyle ON},\textit {sp}}$ ) of 0.43 $\text{m}\Omega \cdot $ cm 2 , a high on/off current ratio ( $\text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) of $10^{{11}}$ , and an excellent Baliga’s figure of merit (BFOM) of 2.01 GW/cm 2 . The measurement results of X-ray spectroscopy (XPS) and Kelvin Probe Force Microscopy (KPFM) proved the presence of F ions and the decrease of surface potential, which reduced the electric field peak and suppressed the leakage current. These results show a great potential of GaN on Si PiN diode for power applications.