학술논문
Neutral beam oxidation for oxide-based nanodevice
Document Type
Conference
Author
Source
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on. :171-173 Aug, 2016
Subject
Language
Abstract
In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta 2 O 5 film with a high film density was obtained, and a fabricated Cu/Ta 2 O 5 /Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlO x /GeO x /Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.