학술논문
A 1 MGy TID Radiation-Tolerant 56 µW CMOS Temperature Sensor with ±1.7°C Accuracy
Document Type
Conference
Author
Source
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on. :1-4 Sep, 2015
Subject
Language
Abstract
The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.