학술논문
OMCVD growth of strained Al/sub x/Ga/sub y/In/sub 1-x-y/As for low threshold 1.3 mu m and 1.55 mu m quantum well lasers
Document Type
Conference
Author
Source
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels Indium Phosphide and Related Materials, 1992., Fourth International Conference on. :453-456 1992
Subject
Language
Abstract
It is shown that low threshold current density compressive and tensile strained lasers with AlGaInAs QWs (quantum wells) can be fabricated with easily controllable QW thicknesses in the range of 7-15 nm. It is also shown that it is possible to adjust the emission wavelength from 1.32 to 1.62 mu m while maintaining the QW thickness and strain. The presence of Al in the QWs does not degrade the laser performance, with a threshold current density as low as 96 A/cm/sup 2/ being obtained for compressively strained 1.32- mu m lasers. Tensile strained 1.36- mu m lasers with a threshold current density as low as 256 A/cm/sup 2/ were achieved for the first time.ETX