학술논문

High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/β-Ga₂O₃ p-n Heterojunction
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3045-3049 May, 2024
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Heterojunctions
Lighting
Sputtering
Radio frequency
Photonic band gap
Magnetic films
Magnetic resonance imaging
CuCro₂/β-Ga₂O₃
heterojunction
magnetron sputtering
solar-blind photodetector (PD)
Language
ISSN
0018-9383
1557-9646
Abstract
We report for the first time high-performance solar-blind self-powered photodetectors (PDs) based on magnetron-sputtered CuCrO2/ $\beta $ -Ga2O3 p-n heterojunction. Our CuCrO2/ $\beta $ -Ga2O3 PDs show a low dark current of 6.5 pA, a high responsivity of 50 mA/W, a high detectivity of $3.7\times 10^{{12}}$ Jones, and a high external quantum efficiency (EQE) of 24.6%, which outperform most reported $\beta $ -Ga2O3-based heterojunction PDs. Such brilliant performances can be attributed to the high-quality CuCrO2 films enabled by in situ magnetron sputtering, which improve the photogenerated carrier mobility and collection efficiency. Furthermore, type-II band alignment between CuCrO2 and $\beta $ -Ga2O3 heterojunction is identified by X-ray photoelectron spectroscopy with the valence band offset of 2.61 eV and the conduction band offset of 0.87 eV, which facilitates the separation of photogenerated electrons and holes. These results show that the CuCrO2/ $\beta $ -Ga2O3 heterojunction could achieve superior solar-blind sensitivity, thus indicating strong prospects in wide practical applications regarding solar-blind detection.