학술논문
3D CFD Simulation of High-Temperature MOCVD Reactor for Epitaxial AlN Growth
Document Type
Conference
Author
Source
2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2018 15th China International Forum on. :1-3 Oct, 2018
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Language
Abstract
Multi-wafer MOCVD equipment for epitaxial AlN growth is indispensable for the development of AlGaN-based UV LED. In this study, 3-Dimensional computational fluid dynamics modeling coupling surface reaction kinetics was carried out, and the number and distribution of the nozzle was optimized for home-made six-wafer reactor chamber. The average growth rate and inhomogeneity in thickness was about $1\mu\text{mph}$ and less than 7%, respectively.