부산대학교 도서관

One of the key challenges for vertical GaN power devices is their complex fabrication process. We present the first experimental realization of a GaN-based vertical-channel junction field-effect transistor. A selective-area regrowth process was developed to epitaxially form the lateral p-n junction used for current control in the channel. First devices fabricated show an ${R}_{\mathrm{ON}}=\textsf {2.36}\,\,\text {m}\Omega \text {cm}^{{2}}$ and demonstrate basic current modulation. We discuss the device characteristics and limitations. Based on a TCAD model fitted to the experimental data, we explore the design rules for future device implementation.