학술논문
RF figures-of-merit for process optimization
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(12):2121-2128 Dec, 2004
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Today, transistor y-parameters are routinely being measured for the determination of the current-gain cut-off frequency f/sub T/ and the maximum oscillation frequency f/sub max/. In this paper, it is shown that a much wider use of y-parameter measurements can be made for the RF characterization of transistors. A method is presented to determine the small-signal behavior of actual RF circuit-blocks from the measurements of the y-parameters of the individual circuit components. This is applied to define additional RF figures-of-merit for basic building blocks of analogue and digital RF circuits. No equivalent transistor circuit or compact-model parameters are needed, which is important for giving quick feedback to process developers. This approach is illustrated on three basic RF circuit blocks using bipolar transistors.