학술논문
Suspended Nanoscale Field Emitter Devices for High-Temperature Operation
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(11):5125-5131 Nov, 2020
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
In this work, we demonstrate suspended two- and four-terminal field emission devices for high-temperature operation. The planar structures were fabricated with tungsten on a 200-nm silicon nitride membrane. The insulator in the vicinity of the terminals was removed to minimize undesirable Frenkel–Poole emission and increase the resistance of leakage current pathways. The effects of temperatures up to 450 °C on Fowler–Nordheim emission characteristics and parasitic leakage resistance were studied. Turn-on voltages with magnitudes under 15 V that further decreased as a function of increasing temperature for the two-terminal device were reported. Gating at temperatures of 150 °C and 300 °C was shown for the four-terminal device, and corresponding transconductance and cutoff frequency values were computed.