부산대학교 도서관

The degradation behavior of Ag/SiO 2 -based conductive bridging RAM (CBRAM) is analyzed by conventional and expanded time-dependent dielectric breakdown (TDDB) models. By comparing the total cycling stress with time-to-breakdown ( ${t}_{\text {bd}}$ ) of the SiO 2 used as a solid-electrolyte switching layer, it is clarified that the cycling stress does not reach the level at which dielectric breakdown of the SiO 2 is triggered. On the other hand, we found that the ${t}_{\text {bd}}$ distribution after several cycles of set/reset stress agrees well with the simulated ${t}_{\text {bd}}$ distribution derived from expanded TDDB models, in which we assumed that a large amount of defects exists locally in the device area. This approach is useful for understanding the degradation in solid-electrolyte oxide of CBRAM.