학술논문
Low Noise Global Shutter Image Sensor Working in the Charge Domain
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(2):310-313 Feb, 2019
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is demonstrated. The fully depleted pinned capacitance is able to store 12ke- with dark current lower than 25e-/s at 60 °C. The GS efficiency, better than 99.96% at 550nm, is reported.