학술논문
Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond
Document Type
Conference
Author
Source
2013 Symposium on VLSI Technology VLSI Technology (VLSIT), 2013 Symposium on. :T214-T215 Jun, 2013
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest A Vt value (=1.34 mVµm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.