학술논문
Fast relaxation of free carriers in compensated n- and p-type germanium
Document Type
Conference
Author
Source
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on. :1-2 Sep, 2013
Subject
Language
ISSN
2162-2027
2162-2035
2162-2035
Abstract
The relaxation of free holes and electrons in highly compensated germanium doped by gallium (p-Ge:Ga:Sb) and antimony (n-Ge:Sb:Ga) has been studied by a pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. The relaxation times vary between 20 ps and 300 ps and depend on the incident THz intensity and compensation level. The relaxation times are about five times shorter than previously obtained for uncompensated n-Ge:Sb and p-Ge:Ga. The results support the development of fast photoconductive detectors in the THz frequency range.