학술논문
A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
Document Type
Conference
Author
Source
Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401) INTERMAG Magnetics Conference, 2003. INTERMAG 2003. IEEE International. :CD-05 2003
Subject
Language
Abstract
In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.