학술논문

Current-controlled liquid phase epitaxy of InAsP on InP substrates
Document Type
Conference
Source
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 1991., Third International Conference.. :488-491 1991
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Epitaxial growth
Indium phosphide
Substrates
Temperature
Solids
Boats
Furnaces
Lattices
Electrons
Probes
Language
Abstract
The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on