학술논문
On the origin of the semi-insulating behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As grown by molecular beam epitaxy
Document Type
Conference
Author
Source
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on. :300-303 1996
Subject
Language
Abstract
We have investigated the origin of the semi-insulating (SI) behaviour of low-temperature In/sub 0.52/Al/sub 0.48/As by correlating electrical and structural properties of epilayers grown by MBE on InP in the 300/spl deg/C-565/spl deg/C temperature range. Using a statistical model, we have analysed the dependence of the Fermi level energy on measurement temperature (77 K-400 K) for SI layers. The resistivity and the transport properties appear to be controlled by three electron traps whose origin is discussed on the basis of extended and structural point defects as observed by TEM.