학술논문
On-state reliability of amorphous silicon antifuses
Document Type
Conference
Source
Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :551-554 1995
Subject
Language
ISSN
0163-1918
Abstract
A unified model of the on-state reliability of a-Si antifuses is presented. This physical model accounts for both thermal activation and electromigration. Temperature at the conductive link is the temperature at which the antifuse is stressed and is controlled by the stress current, not the ambient. To ensure a 10 year lifetime, a-Si antifuses should be operated at a current value less than 60% of its programming current value.