학술논문
Fin-shape Optimization for Single Diffusion Break Device Performance in FinFET Technology
Document Type
Conference
Author
Source
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022
Subject
Language
Abstract
Single diffusion break (SDB) devices in FinFET technology are desirable and attractive for their minimum footage in aggressively scaled circuits. This paper reports fin-shape optimization efficiently improved SDB PFET device performance by up to 9%. More importantly, it was found that the performance benefit was case-dependent on fin shape. The performance improvement was observed on a straighter fin profile if fin bottom width was lower than a threshold point, while when fin bottom width was larger than the threshold point, fin top/bottom width ratio existed an optimal ratio at 0.54. This was verified and predicted through silicon-validated technology computer-aided design (TCAD) simulation.