학술논문
Technology and design of GaN power devices
Document Type
Conference
Author
Source
2015 45th European Solid State Device Research Conference (ESSDERC) Solid State Device Research Conference (ESSDERC), 2015 45th European. :64-67 Sep, 2015
Subject
Language
ISSN
1930-8876
2378-6558
2378-6558
Abstract
This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (