학술논문
Carrier Injection Mechanism of Metal-MoS2 Ohmic Contact in MoS2 FETs
Document Type
Conference
Author
Source
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Electron Devices and Solid State Circuits (EDSSC), 2018 IEEE International Conference on. :1-2 Jun, 2018
Subject
Language
Abstract
In order to enhance the carrier injection ofMoS2 field effect transistors (FETs,) understanding the injection mechanism of metal MoS 2 contacts is essential. In this work, MoS 2 (FETs) with Ti and Sc electrodes were faUricated and characterized, respectively. The carrier injection mechanism was studied from the perspective of the tunneling models. With the narrower barrier width, the MoS 2 contact shows a different injection mechanism from that of MoS 2 , making Sc a promising improvement as MoS 2 FETs electrodes.