학술논문
Back surface fields for n/p and p/n GaInP solar cells
Document Type
Conference
Source
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Photovoltaic energy conversion Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on. 2:1906-1909 vol.2 1994
Subject
Language
Abstract
The authors have grown n/p/p/sup +/ and p/n/n/sup +/ GaInP/sub 2/ top cells, lattice matched to GaAs for multijunction tandem solar cells. They have studied the effect of different types of back surface field (BSF) layers on the cell parameters of each cell. These layers are namely, abrupt strained GaInP/sub 2/, graded strained GaInP/sub 2/, disordered GaInP/sub 2/ and AlGaAs layers. The measurements were done under 1-sun AMO spectrum. The results show that the abrupt strained GaInP/sub 2/, BSF outperforms the disordered GaInP/sub 2/ BSF. Likely related to material quality, the AlGaAs layer clearly produce the least efficient BSF. It has been found that the abrupt strained Ga/sub x/In/sub 1-x/P BSF with x=0.56 gives better results than the case with x=0.63 for the p/n/n/sup +/ structure.