부산대학교 도서관

Gate-open failures in power semiconductors occur when the gate-bond wire cracks or lifts-off leading to loss of gate control. In molded discrete devices, this failure mode may occur intermittently making it very challenging to analyze and detect. In this article, intermittent gate-open failures are comprehensively investigated in the context of discrete silicon carbide (SiC) mosfets. First, the mosfet's behavior under various possible gate-open failure scenarios is analyzed in detail through simulations. Several SiC mosfets are aged on a dc power cycling setup and gate-open failure mechanism is verified through systematic multistep failure analysis, which includes on-board characterization, nondestructive C-SAM analysis, decapsulation, and optical inspection followed by scanning electron microscopy analysis of the failed devices. To understand the potential mechanism behind gate-open failure in SiC mosfets, thermo-mechanical finite element analysis analysis is performed on a high-fidelity model that shows interfacial shear stress at gate-bond. Furthermore, a robust on-board technique for reliable cycle-by-cycle detection of gate-open faults is proposed. The proposed technique is experimentally verified for all possible fault scenarios and shown to detect faults in as low as $\text{150}\;\text{ns}$. It is shown that compared to the traditional DESAT protection scheme, the proposed mechanism can prevent potential shoot-through events that may be caused by gate-open failure.