학술논문
P-type Dual Material Gate Si and Si(1-x)Gex TFETs: A Comparative Study for DC and Analog/RF Performance Evaluation
Document Type
Conference
Source
2024 Fourth International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT) Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT), 2024 Fourth International Conference on. :1-6 Jan, 2024
Subject
Language
Abstract
The work discusses the analyses of a Dual Material Gate TFET of p-Channel (p-DMG-TFET) with Si/SiGe Hetero-junction (HJ) to govern better improvements in radio frequency (RF) applications. The simulation outcome achieves an improved on-current to off-current ratio (I on /I off ~10 9 ), and minimum Sub-threshold Swing (19 mV/decade) of the proposed Si0.7Ge0.3 hetero TFET concerning Si used as channel. Based on their DC, Analog/RF properties, a thorough simulation analysis of Si0.7Ge0.3and Si channel devices is conducted. From this, a clear comparison has been made and better results for both digital and analog applications have been produced. Numerous digital and analog FOMs of proposed DMG-HJ-TFET, such as I DS , C GG , g m , g ds , f T and TGF are investigated and compared with Si channel shows better outcomes and is confirmed as a competent device for RF circuitry implementations.