학술논문
Atmospheric pressure MOVPE growth with monolayer control of GaAs/AlGaAs doped and undoped superlattices for application to infrared detectors
Document Type
Conference
Author
Source
Proceedings of LEOS '93 LEOS '93 Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE. :427-428 1993
Subject
Language
Abstract
In this presentation, it will be demonstrated that 50-period SLs with interface roughness, heterojunction abruptness, and layer thickness reproducibility of one atomic layer can be achieved by the atmospheric pressure MOVPE technique. We will also show that well controlled high doping levels, dopant position, and accurate measurement of the carrier density in the wells can be obtained, which are essential for making infrared photodetectors (IR PDs).ETX