학술논문
A small data-line-swing read/write scheme for high-endurance nonvolatile DRAMs with ferroelectric capacitors
Document Type
Conference
Author
Source
1996 Symposium on VLSI Circuits. Digest of Technical Papers VLSI circuits VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on. :52-53 1996
Subject
Language
Abstract
A small data-line-swing read/write scheme featuring a doubled data-line-capacitance recall technique was proposed. The proposed scheme enables nonvolatile DRAMs to approach the performance, including endurance and power consumption, of existing volatile DRAMs could be achieved.