학술논문
Noise Characteristics of ZnO-Nanowire Photodetectors Prepared on ZnO:Ga/Glass Templates
Document Type
Periodical
Author
Source
IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 7(7):1020-1024 Jul, 2007
Subject
Language
ISSN
1530-437X
1558-1748
2379-9153
1558-1748
2379-9153
Abstract
In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only $1.37\times 10^{-7}\ $A/cm $^{2}$. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were $5.73\times 10^{-11}\ \hbox{W}$ and $6.17\times 10^{9}\ \hbox{cmHz}^{0.5}\ \hbox{W}^{-1}$, respectively.