부산대학교 도서관

In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only $1.37\times 10^{-7}\ $A/cm $^{2}$. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were $5.73\times 10^{-11}\ \hbox{W}$ and $6.17\times 10^{9}\ \hbox{cmHz}^{0.5}\ \hbox{W}^{-1}$, respectively.