학술논문
A new a-Si TFT with Al/sub 2/O/sub 3//SiN double-layered gate insulator for 10.4-inch diagonal multicolor display
Document Type
Conference
Author
Source
International Technical Digest on Electron Devices Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International. :851-854 1990
Subject
Language
ISSN
0163-1918
Abstract
A novel a-Si TFT (thin film transistor) with an Al gate electrode and an Al/sub 2/O/sub 3//SiN double-layered gate insulator has been developed and successfully applied to a 10.4-in diagonal multicolor display panel. Al is a low resistivity metal and it is also possible to form Al/sub 2/O/sub 3/ by anodic oxidation. These features contribute greatly to decreasing the number of defects in the panel and are indispensable for manufacturing a large-size display. The Al, which is used as a gate electrode, can also be used as a gate bus-line metal. As a result, the gate bus-line resistance of the panel can be reduced to about 2 k Omega , which is quite effective for improving the image quality of the panel.ETX