학술논문
Field emission imaging study of silicon field emitters
Document Type
Conference
Author
Source
1992 International Technical Digest on Electron Devices Meeting Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International. :371-374 1992
Subject
Language
ISSN
0163-1918
Abstract
The behavior of electron emission from pyramid-shaped silicon field emitters has been studied by direct imaging of electron emission as well as by emission current-voltage measurement. Oxide covered silicon emitter surfaces have resulted in structureless emission patterns. The electron emitting angle is found to vary significantly with the extraction voltage or the emission current. Experimental measurement and analysis of emission images under moderate operating conditions showed that resulted final emitting angles are under 13 degrees while initial electron emitting angles from the emitter could be as high as 18 degrees .ETX