학술논문
Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices
Document Type
Conference
Author
Source
Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE. 1:330-337 Oct, 2006
Subject
Language
ISSN
0197-2618
Abstract
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.