학술논문
LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):809-815 Apr, 2024
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
Single-event burnout (SEB) and single-event leakage current (SELC) behavior of 1200 and 3300 V silicon carbide (SiC) power devices are analyzed based on heavy-ion irradiation tests. Both SEB and SELC degradation thresholds are improved in the 3300 V devices by at least 300 V compared to the 1200 V devices. Additionally, it was demonstrated that the measured SEB threshold is a strong function of the device bias and irradiation history and that bias and irradiation steps at intermediate voltages between the charge collection region and SEB region can result in parametric failure from accumulated leakage current rather than catastrophic failure by burnout.