학술논문
Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 /spl mu/m
Document Type
Conference
Source
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004. LEOS annual meeting Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE. 1:144-145 Vol.1 2004
Subject
Language
Abstract
We present 1.5 /spl mu/m CW GaInNAsSb/GaAs lasers with typical room temperature threshold densities below 600 A/cm/sup 2/, external efficiencies above 50% and output powers of 200 mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.