학술논문
Investigation of the influence of process and design on soft error rate in integrated CMOS technologies thanks to Monte Carlo simulation
Document Type
Conference
Source
2008 IEEE International Reliability Physics Symposium Reliability Physics Symposium, 2008. IRPS 2008. IEEE International. :729-730 Apr, 2008
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
This work shows the capabilities of Monte Carlo simulation based on nuclear database to identify the influence of device parameters and process on Single Cell Upset and Multicell Upset rates in integrated bulk and SOI CMOS technologies up to 65nm. The method is applicable both to SRAM and logic cells, and is valid for high energy and thermal neutrons.