학술논문
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(11):4746-4751 Nov, 2017
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.