학술논문

Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(1):57-62 Jan, 2020
Subject
Nuclear Engineering
Bioengineering
Ions
Silicon
Measurement by laser beam
Solid modeling
Laser theory
Geometry
Absorption
Pulsed laser
sensitive volume
single-event effects
single-event transients (SETs)
two-photon absorption (TPA)
Language
ISSN
0018-9499
1558-1578
Abstract
A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with the experimental two-photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume overpredicts the experimental collected charge at low bias and agrees at high bias. A sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion- and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate, at the higher bias, results in similar sensitive volumes.