학술논문
Effects of layer thickness variations on vertical-cavity surface-emitting DBR semiconductor lasers
Document Type
Periodical
Author
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 2(3):162-164 Mar, 1990
Subject
Language
ISSN
1041-1135
1941-0174
1941-0174
Abstract
A theoretical analysis of the influence of layer thickness variation in vertical-cavity surface-emitting lasers with distributed Bragg reflectors (DBRs) on lasing wavelength is presented. It is shown that changing the active region length of one of the layers in the DBR mirror by only one unit cell (0.56 nm) is sufficient to produce shifts in the lasing wavelength up to 0.12 nm (for an AlGaAs laser). This could limit the precision with which a desired wavelength, its reproducibility, and its uniformity across a large wafer can be obtained. Possible influences on the linewidth of broad area devices are also discussed.ETX